您的位置：首页 > 产品中心 > 上海贝岭 > 功率器件 > 沟槽栅金属氧化物半导体场效应管(Trench MOSFETs) > BLM06N15

BLM06N15

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
Trench MOSFETs	N-Channel	150V	140A	6.4mΩ	175nC	TO247

06N15, 150V, 低压, MOS

BLM06N15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

优势特点

High power and current handing capability
Lead free product is acquired
100% avalanche tested
100% ΔVds tested
RoHS product

BLM06N15产品手册下载

样片申请

请简单描述您的需求，以便我们更精准的为您服务

样片申请 >