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BLM075N03

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
Trench MOSFETs	N-Channel	30V	50A	7.5mΩ	24nC	TO252 PDFN3.3x3.3

075N03, 30V, 低压, MOS

BLM075N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

优势特点

High power and current handing capability
Lead free product is acquired
100% avalanche tested
100% ΔVds tested
RoHS product
Surface mount package

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