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BLM024N03

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
Trench MOSFETs	N-Channel	30V	130A	2.7mΩ	97nC	TO252

024N03, 30V, 低压, MOS

BLM024N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

优势特点

High power and current handing capability
Lead free product is acquired
100% avalanche tested
100% ΔVds tested
RoHS product
Surface mount package

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