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BLM04N06

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
Trench MOSFETs	N-Channel	60V	150A	4.2mΩ	186nC	TO220 TO263

04N06，lv，低压

The BLM04N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

优势特点

High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current

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