BLQC160N120-Z

产品特点
技术文档

VDSS(V)	ID(A)	RDS(ON)(mΩ)@VGS=15V（Typ.）	RDS(ON)(mΩ)@VGS=15V（Max.）	VGS(th)(V)(Min.)	Package
1200V	25A	158mΩ	122mΩ	2.8V	TO247-4L

160N120，high voltage，SiC MOSFET

BLQC160N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation frequency and compact system size for power-electronic system application compared to Silicon.

优势特点

High blocking voltage with low on-resistance
Fast intrinsic diode with low reverse recovery
Low switching losses

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