BLP05N07-P.B

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package	Application
SGT MOSFETs	N-Channel	70V	115A	5mΩ	46nC	TO220 TO263	BMS, MOTOR

05N07, LV, 低压, sgt

BLP05N07, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
High Avalanche Ruggedness
RoHS Product

BLP05N07-P.B产品手册下载

样片申请

请简单描述您的需求，以便我们更精准的为您服务

样片申请 >