BLP07N11L-Q.D

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package	Application
SGT MOSFETs	N-Channel	110V	102A	7mΩ	67nC	TO252 PDFN5x6	SMPS

07N11L, LV, 低压, sgt

BLP07N11L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
High Avalanche Ruggedness
RoHS Product

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