BLP05N10GL2P-D.Q

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
SGT MOSFETs	N-Channel	100V	122A	5mΩ	82nC	TO252 PDFN5X6

05N10GL2P, LV, 低压, sgt

BLP05N10GL2P, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱplus technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
High Avalanche Ruggedness
RoHS Product

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