BLP65N15-D

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package	Application
SGT MOSFETs	N-Channel	150V	15A	65mΩ	11.2nC	TO252	Synchronous rectification High speed switching applications

65N15，low-voltage，sgt

BLP65N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for synchronous rectification and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product

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