| Type | Mode | VDS(Max.) | ID(Max.) | RDS(on)(Max.) | Qg(Typ) | Package | Application | SGT MOSFETs | N-Channel | 40V | 330A | 1.3mΩ | 111nC | TOLL-8 | MOTOR |
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01N04,LV,低压,sgt
BLP01N04, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high speed switching applications.
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