BLP036N10-Q

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package	Application
SGT MOSFETs	N-Channel	100V	164A	3.6mΩ	112nC	PDFN56	BMS, MOTOR

036N10，LV，低压,sgt

BLP036N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅲ technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product

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