BLP02N08G3C-QA

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package	Application
SGT MOSFETs	N-Channel	80V	291A	2mΩ	148nC	DCPDFN56	BMS

02N08G3C，LV，低压,sgt

BLP02N08G3C, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅲ technology and Dual Cu clip bond Assembly technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product

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