BLP160N10L-S

产品特点
技术文档

Type	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
SGT MOSFETs	100V	4A	160mΩ	4.8nC	SOT89-3

160N10L，LV，低压,sgt

BLP160N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product

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