BLP032N10-T

产品特点
技术文档

Type	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
SJ MOSFETs	100V	150A	3.2mΩ	114nC	TOLL8

032N10，LV，低压,sgt

BLP032N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

优势特点

"● Fast Switching
● Low On-Resistance
● Low Gate Charge
● Low Reverse transfer capacitances
● High avalanche ruggedness
● RoHS product

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