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BLP012N10G2P-T

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package	Application
SGT MOSFETs	N-Channel	100V	489A	1.3mΩ	240nC	TOLL8	BMS

012N10G2P, LV, SGT

BLP012N10G2P, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ plus technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
High Avalanche Ruggedness
RoHS Product

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