BLP06N15-P.B

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
SGT MOSFETs	N-Channel	150V	143A	6mΩ	85.6nC	TO220 TO263

06N15, low-voltage, sgt

BLP06N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
High Avalanche Ruggedness
RoHS Product

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