BLG15T65FDB

产品特点
技术文档

Type	Grade	Mode	VCES(Max.)	PTOT(Max.)	Freewheeling diode	IC (A) (@ Tc = 100 °C) max	IC (A) (@ Tc = 25 °C) max	VCE(sat) (V) typ	Qg (nC) typ
IGBT Trench FS	Industrial	N-Channel	650V	78W	FRD	15A	30A	1.55V	38nC
Eon (mJ) typ	Eoff (mJ) typ	IF (A) (@ Tc = 100 °C) max	IF (A) (@ Tc = 25 °C) max	VF (V) typ	Irrm(A) typ	Qrr (nC) typ	Package	Application
0.25mJ	0.2mJ	15A	30A	2.2V	4.8A	228nC	TO220 TO220F TO263	UPS Motor drives PFC Portable power station

15T65, HV, 高压, IGBT

BLG15T65FDB is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized switching performance and low gate charge Qg. The IGBT is suitable device for BLDC, UPS, and high switching frequency applications.

优势特点

Fast Switching
Low VCE(sat)
Positive Temperature Coefficient
Fast Recovery Anti-parallel Diode
RoHS Product

BLG15T65FDB产品手册下载

样片申请

请简单描述您的需求，以便我们更精准的为您服务

样片申请 >