BLQG50T65FDLA

产品特点
技术文档

Type	Grade	Mode	VCES(Max.)	PTOT(Max.)	Freewheeling diode	IC (A) (@ Tc = 100 °C) max	IC (A) (@ Tc = 25 °C) max	VCE(sat) (V) typ	Qg (nC) typ
IGBT Trench FS	Automotive	N-Channel	650V	300W	FRD	50A	100A	1.6V	106nC
Eon (mJ) typ	Eoff (mJ) typ	IF (A) (@ Tc = 100 °C) max	IF (A) (@ Tc = 25 °C) max	VF (V) typ	Irrm(A) typ	Qrr (nC) typ	Package	Application
0.98mJ	0.81mJ	50A	100A	2V	4.4A	220nC	TO247 TO3PF TO3PN	Photovoltaic converters UPS

50T65, HV, 高压, IGBT

BLQG50T65FDLA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat) , optimized switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications.

优势特点

Fast switching
Low VCE(sat)
Positive temperature coefficient
Fast recovery anti-parallel diode
RoHS product

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