BLG10T65FUL

产品特点
技术文档

Type	Grade	Mode	VCES(Max.)	PTOT(Max.)	Freewheeling diode	IC (A) (@ Tc = 100 °C) max	IC (A) (@ Tc = 25 °C) max	VCE(sat) (V) typ	Qg (nC) typ
IGBT Trench FS	Industrial	N-Channel	650V	83W	FRD	10A	20A	1.4V	39nC
Eon (mJ) typ	Eoff (mJ) typ	IF (A) (@ Tc = 100 °C) max	IF (A) (@ Tc = 25 °C) max	VF (V) typ	Irrm(A) typ	Qrr (nC) typ	Package	Application
0.17mJ	0.14mJ	5A	10A	1.35V	4A	227nC	TO252	UPS, PFC

10T65, HV, 高压, IGBT

BLG10T65FUL is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for BLDC, UPS, and low VCE(sat) applications.

优势特点

Fast switching
Low VCE(sat)
Positive temperature coefficient
Very soft, fast recovery anti-parallel diode
RoHS product

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