BLG60T65FDK

产品特点
技术文档

Type	Grade	Mode	VCES(Max.)	PTOT(Max.)	Freewheeling diode	IC (A) (@ Tc = 100 °C) max	IC (A) (@ Tc = 25 °C) max	VCE(sat) (V) typ	Qg (nC) typ
IGBT Trench FS	Industrial	N-Channel	650V	375W	FRD	60A	120A	1.7V	137nC
Eon (mJ) typ	Eoff (mJ) typ	IF (A) (@ Tc = 100 °C) max	IF (A) (@ Tc = 25 °C) max	VF (V) typ	Irrm(A) typ	Qrr (nC) typ	Package	Application
1.39mJ	1.06mJ	60A	120A	2.3V	3.64A	76nC	TO3PN TO247	Photovoltaic converters UPS Boost

60T65，HV，高压，IGBT

BLG60T65FDK is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS, Boost and high switching frequency applications.

优势特点

Fast Switching
Low VCE(sat)
Positive temperature coefficient
Fast recovery anti-parallel diode
RoHS product

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