| Type | Grade | Mode | VCES(Max.) | PTOT(Max.) | Freewheeling diode | IC (A) (@ Tc = 100 °C) max | IC (A) (@ Tc = 25 °C) max | VCE(sat) (V) typ | Qg (nC) typ | IGBT Trench FS | Automotive | N-Channel | 650V | 300W | FRD | 50A | 100A | 1.65V | 110nC | Eon (mJ) typ | Eoff (mJ) typ | IF (A) (@ Tc = 100 °C) max | IF (A) (@ Tc = 25 °C) max | VF (V) typ | Irrm(A) typ | Qrr (nC) typ | Package | Application | 0.6mJ | 0.5mJ | 25A | 50A | 1.45V | -A | 33nC | TO247 | Photovoltaic converters UPS CCU |
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50T65, HV, 高压, IGBT
BLQG50T65FCKA is obtained by advanced Trench Field Stop (T-FS) technology which is characteristic with low VCE(sat), optimized switching performance and low gate charge Qg. The IGBT is suitable device for Photovoltaic, UPS and high switching frequency applications.
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