BLP016N04LC-Q

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package	Application
SGT MOSFETs	N-Channel	40V	195A	1.6mΩ	61nC	PDFN5x6	Synchronous rectification

BLP016N04LC，低压SGT

BLP016N04LC, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology and Cu clip bond Assembly technology, which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications.

优势特点

Low On-Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
High Avalanche Ruggedness
RoHS Product

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