BLP021N08-P.B

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package	Application
SGT MOSFETs	N-Channel	80V	295A	2.1mΩ	156nC	TO220 TO263	BMS

021N08, LV, 低压, sgt

BLP021N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

优势特点

Fast switching
Low On-Resistance
Low gate charge
Low reverse transfer capacitances
High avalanche ruggedness
RoHS product

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