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BLP023N10-PB.F

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
SGT MOSFETs	N-Channel	100V	305A	2.3mΩ	240nC	TO220 TO263 TO247

023N10, LV, 低压,SGT

BLP023N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse Transfer Capacitances
High Avalanche

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