BLP021N10-T

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package	Application
SGT MOSFETs	N-Channel	100V	292A	2.1mΩ	168nC	TOLL8	BMS, MOTOR

021N10,LV,低压,SGT

BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.

优势特点

Fast Switching
Low On-Resistance
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product

BLP021N10-T产品手册下载

样片申请

请简单描述您的需求，以便我们更精准的为您服务

样片申请 >