BLQC16N120

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技术文档

VDS(V)	ID(A)	RDS(on).Typ(mΩ)	VTH(V)	Package
1200	120	16	1.8~3.6	TO247-4L

BLQC16N120 is an N-channel enhancement type planar MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation frequency and compact system size for power-electronic system application compared to Silicon.

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