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BLQP065N08G

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VDS(V)	ID(A)	RDS(on).Typ(mΩ)	VTH(V)	Package
85	80	5.4	2.0~4.0	TO252

BLQP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double
trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications.

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