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| Voltage | Density | Temperature | I/O Bus | Frequency (MHz) | Standby | Read | Erase | Program | Erase Speed | 2.7~3.6V | 1G | Industrial (-40℃ to +85℃) | extend/Dual/Quad/DTR | Normal:108 Double:54 | Max:200uA | Max:18mA | Max:20mA | Max:20mA | Sector:250ms Block:0.7s Chip:240s | Page Program Speed | ESD(HBM) | Process | WSON6*8mm | TFBGA24 8*6mm | 0.5ms | ±2KV | ETOX | √ | √ |
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