BL10N80

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
Planar MOSFETs	N-Channel	800V	10A	900mΩ	53nC	TO220 TO220F TO3PN TO3PF TO247

产品简介

BL10N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

10N80，hv，高压

优势特点

Fast Switching
100% avalanche tested
Improved dv/dt capability
RoHS product

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BL10N80

产品手册