BL12N65

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
Planar MOSFETs	N-Channel	650V	12A	620mΩ	49nC	TO-220,TO-220F

产品简介

BL12N65, the silicon N-channel Enhanced
MOSFETs, is obtained by advanced MOSFET
technology which reduce the conduction loss,
improve switching performance and enhance the
avalanche energy. The transistor is suitable
device for SMPS, high speed switching and general
purpose applications.

12N65，hv，高压

优势特点

● Fast Switching
● 100% avalanche tested
● Improved dv/dt capability
● RoHS product

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BL12N65

产品手册