|内存容量||输入电压||写入周期时间||工作温度||读写耐久性 (读写次数)||封装类别||供货状态||8Mbit(512K×16)||1.8 to 3.6V||150ns||-40 to +85℃||10万亿次||FBGA-48||EOL|
Fujitsu Semiconductor Limited announced that it has developed the MB85R8M2T, an 8Mbit FeRAM that has the largest density in Fujitsu's family of FeRAM non-volatile memories. Mass-produced products are currently available.
This product features a wide power-supply voltage range from 1.8V to 3.6V and an SRAM-compatible parallel interface. The MB85R8M2T is the most appropriate memory that fits the requirements of customers who are developing industrial machinery and want to use something with larger density than the current 4Mbit FeRAM, or to eliminate the need of a battery for an SRAM whose usage pertains to the backup of data during a power outage.
By replacing the SRAM device with this new FeRAM product through various industrial applications, such as in control units in facilities and robots, it can eliminate the need for a backup battery and can save approximately 90% of the mounting area for memory parts. It contributes towards reducing battery-related costs.
For approximately 20 years, Fujitsu Semiconductor has mass-produced FeRAM non-volatile memory products featuring high read/write endurance, high-speed write operation, and low power consumption. In particular, the guaranteed read/write cycles of their FeRAM product are 10 trillion cycles, which is 10 million times that of the non-volatile memory EEPROM offered by their competitors. For this reason, Fujitsu FeRAM products have been adopted for industrial applications requiring frequent data re-writing such as real-time data logging and 3D positioning data logging.
Fujitsu Semiconductor has launched a new 8Mbit FeRAM product, MB85R8M2T, that operates with a wide power-supply voltage range from 1.8V to 3.6V through an SRAM-compatible parallel interface.
The FeRAM product is available in a 48-pin FBGA package with very small dimensions of 8.00 x 6.00 mm, developed according to customer requirements. If a customer is using SRAM in a 44pin TSOP package together with a data-backup battery in their application, by replacing it with FeRAM, approximately 90% of their mounted surface area can be saved due to eliminating the need for a battery. (Fig. 1)
In addition, replacing the SRAM with FeRAM is effective in reducing total battery-related costs. Eliminating the data-backup battery not only reduces the cost of a component, it also eliminates the periodical costs associated with replacement batteries, battery stock, and other maintenance, reducing total costs in terms of both development and operation. This batteryless solution can, therefore, contribute greatly towards reducing the above mentioned total costs. (Fig.2)
Fujitsu Semiconductor continues to provide our customers with memory products and solutions that contribute to increased performance and reduced total costs in customer end-products.