内存容量 | 输入电压 | 工作频率 (MAX) | 工作温度 | 读写耐久性 (读写次数) | 封装类别 | 供货状态 | 4Mbit | 1.8 to 3.6V | 50MHz | -40 to +125℃ | 10万亿次 | DFN-8 | 量产中 |
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Fujitsu Semiconductor Memory Solution Limited is offering 4Mbit FeRAM MB85RS4MTY in mass-production. (Fig.1)
Complying with AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade", this FeRAM product is optimal for industrial robots and automotive applications such as advanced driver-assistance systems (ADAS) which require electronic components with high reliability. (Fig.2)
FeRAM is a non-volatile memory product with superior features of high read/write endurance, fast writing speed operation and low power consumption, and it has been mass-produced for over 20 years.
Since mass-production of FeRAM products capable to operate up to 125°C started in July 2017, its product lineup has been expanding. (Fig.3) This time the 4Mbit FeRAM MB85RS4MTY, which has the largest density in the 125°C-operating FeRAM product family, is added to mass-production this month.
This FeRAM with an SPI interface operates at a wide power supply voltage from 1.8V to 3.6V. In the temperature range from -40°C to +125°C, it guarantees 10 trillion read/write cycle times and low operating currents such as a maximum write current of 4mA (operated at 50MHz). It is housed in an 8-pin DFN (Dual Flatpack No-leaded) package.
The MB85RS4MTY meets the high reliability testing to satisfy AEC-Q100 Grade 1, a qualification requirement for products as "automotive grade", therefore, suitable for high performance industrial robots and automotive applications such as advanced driver-assistance systems (ADAS).
Our FeRAM products can solve following issues arising from using EEPROM or SRAM for high reliability applications.
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