BLP12N10G-Q

产品特点
技术文档

Type	Mode	VDS(Max.)	ID(Max.)	RDS(on)(Max.)	Qg(Typ)	Package
SGT MOSFETs	N-Channel	100V	35A	12mΩ	37nC	PDFN5X6

12N10G,LV,低压,SGT

BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications.

优势特点

Fast Switching
Low On-Resistance ( RDS(on)≤12mΩ )
Low Gate Charge
Low Reverse transfer capacitances
High avalanche ruggedness
RoHS product

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